Characterization of SiOxNy films deposited from SiCI4 by remote plasma-enhanced chemical vapor deposition

Thin Solid Films

Volumn 317, Issue 1-2, 1998, Pages 149-152

  Sanchez O ^a   Aguilar, M A ^b   Falcony, C ^b   Martinez Duart J M ^a   Hernandez Velez M ^c  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

^c Fac de Fisica   (Cuba)

Author keywords

Chemical vapour deposition; Oxynitride; Silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; ELECTRIC CONDUCTIVITY; ELLIPSOMETRY; INFRARED SPECTROSCOPY; PLASMA APPLICATIONS; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; STOICHIOMETRY; SURFACE ROUGHNESS;

FILM CHARACTERIZATION; FILM DEPOSITION; SILICON OXYNITRIDE FILM;

SEMICONDUCTING FILMS;

EID: 0032050550     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00612-3     Document Type: Article

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