Study of surface topography and optical properties of Ge15Bi38Se47 films

Journal of Materials Science: Materials in Electronics

Volumn 9, Issue 2, 1998, Pages 133-137

  Rajagopalan, T ^a   Reddy, G B ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; BAND STRUCTURE; CRYSTALLIZATION; EVAPORATION; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING GERMANIUM COMPOUNDS; SURFACE PROPERTIES; SURFACE STRUCTURE; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS; ADHESION; CRYSTAL STRUCTURE; DEPOSITION; SURFACE TOPOGRAPHY; THERMAL EFFECTS;

OPTICAL BAND GAP; STRUCTURAL PROPERTIES; SURFACE TOPOGRAPHY; THERMAL ANNEALING; VACUUM EVAPORATION; ADHERENT AMORPHOUS FILMS; GERMANIUM BISMUTH SELENIDE; OPTICAL CONSTANTS; SEMICONDUCTING BEHAVIOUR;

SEMICONDUCTING FILMS;

EID: 0032050532     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008813506876     Document Type: Article

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