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Volumn 9, Issue 2, 1998, Pages 103-107

Metallization studies on Ti3SiC2-based contacts on 6H-SiC

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC RESISTANCE; GOLD; METALLIC FILMS; METALLIZING; MORPHOLOGY; PALLADIUM; SILICON CARBIDE; STRUCTURE (COMPOSITION); THERMAL STRESS; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS; ANNEALING; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; THIN FILMS; TITANIUM;

EID: 0032050531     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008853220989     Document Type: Article
Times cited : (10)

References (10)
  • 4
    • 0029521355 scopus 로고    scopus 로고
    • F. GOESMANN and R. SCHMID-FETZER, Semicond. Sci. Technol. 10 (1995) 1652 and 11 (1996) 461.
    • (1996) Semicond. Sci. Technol. , vol.11 , pp. 461


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.