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Journal of Physics Condensed Matter

Volumn 10, Issue 14, 1998, Pages 3201-3212

The effect of an intense terahertz irradiation on electron transport in two-dimensional semiconductors

(1) Lei, X L a,b

a CCAST WORLD LABORATORY (China)

b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRON SCATTERING; IMPURITIES; IRRADIATION; NUMERICAL METHODS; PHONONS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

BALANCE EQUATION APPROACH; CARRIER MOBILITY; CENTRE OF MASS VELOCITY; DC DRIFT VELOCITY; ELECTRON TEMPERATURE; LATTICE TEMPERATURE; RADIATION FIELD STRENGTH; TERAHERTZ ELECTROMAGNETIC IRRADIATION;

ELECTRON TRANSPORT PROPERTIES;

EID: 0032050345 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/10/14/009 Document Type: Article

Times cited : (25)

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