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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 1730-1735

Correlation between structure and optoelectronic properties of undoped macrocrystalline silicon

(4) Siebke, Frank a,b Yata, Shigeo a Hishikawa, Yoshihiro a Tanaka, Makoto a

a SANYO ELECTRIC CO LTD (Japan)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

Constant photocurrent method; Crystallinity; Microcrystalline silicon; Optical absorption; Raman scattering

Indexed keywords

CHARGE CARRIERS; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRONIC PROPERTIES; GLOW DISCHARGES; LIGHT ABSORPTION; OPTICAL PROPERTIES; PERCOLATION (SOLID STATE); PHOTONS; RAMAN SCATTERING;

CONSTANT PHOTOCURRENT METHOD;

SEMICONDUCTING SILICON;

EID: 0032049945 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.1730 Document Type: Article

Times cited : (4)

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