Undoped and doped crystalline silicon films obtained by Nd-YAG laser

Thin Solid Films

Volumn 317, Issue 1-2, 1998, Pages 140-143

  Ferreira, I ^a   Carvalho, J ^a   Martins, R ^a  

^a Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

Author keywords

Amorphous materials; Crystallization; Laser

Indexed keywords

AMORPHOUS SILICON; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; LASER BEAMS; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; THICKNESS MEASUREMENT;

SHOT DENSITY; SILICON THIN FILM;

THIN FILMS;

EID: 0032049889     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00511-7     Document Type: Article

References (2)

1. R.I. Johnson, G.B. Anderson, J.B. Boyce, D.K. Fork, P. Mei, S.E. Ready, S. Chen, Critical laser fluence observed in (111) texture. Grain size and mobility of laser crystallized amorphous silicon, Mat. Res. Soc. Symp. Proc. 297 (1993) 533.
2. C. Summonte, M. Bianconi, D. Govoni, Excimer laser amorphous silicon film crystallization: a study of time resolved reflectivity measurements, Mat. Res. Soc. Symp. Proc. 297 (1993) 539.