Modeling the pressure dependence of dc bias voltage in asymmetric, capacitive rf sheaths

IEEE Transactions on Plasma Science

Volumn 26, Issue 2, 1998, Pages 181-189

  Chandhok, Manish ^a   Grizzle, Jessy W ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Asymmetric geometry; Capacitively coupled rf glow discharge; Dc bias voltage; Reference cell; Rf sheath model; RIE

Indexed keywords

APPROXIMATION THEORY; ELECTRIC CURRENTS; ELECTRODES; EQUATIONS OF MOTION; GLOW DISCHARGES; MATHEMATICAL MODELS; PLASMA ETCHING; PRESSURE EFFECTS; REACTIVE ION ETCHING;

CAPACITIVELY COUPLED PLASMAS; PLASMA ION DENSITY; POISSON'S EQUATION;

PLASMA SHEATHS;

EID: 0032049368     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.669625     Document Type: Article

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