Defect states in the intrinsic layer of amorphous silicon solar cells studied by the constant-photocurrent method

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 77, Issue 4, 1998, Pages 1049-1061

  Sládek, Petr ^a   Sťahel, Pavel ^a   Cabarrocas, Pere Roca I ^b   Morin, Philippe ^b  

^a MASARYK UNIVERSITY   (Czech Republic)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTAL DEFECTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; HYDROGENATION; INTERFACES (MATERIALS); PHASE EQUILIBRIA; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SPECTRUM ANALYSIS;

AMORPHOUS SILICON SOLAR CELLS; CONSTANT PHOTOCURRENT METHOD; DEFECT STATES; LIGHT SOAKING;

SOLAR CELLS;

EID: 0032048770     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642819808206404     Document Type: Article

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