Exclusive OR/NOR IC for > 40 Gbit/s optical transmission systems

Electronics Letters

Volumn 34, Issue 8, 1998, Pages 764-765

  Murata, K ^a   Otsuji, T ^a   Enoki, T ^a   Umeda, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COST EFFECTIVENESS; DATA COMMUNICATION SYSTEMS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED OPTOELECTRONICS; LOGIC GATES; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM COMPOUNDS; TELECOMMUNICATION SERVICES;

OPTICAL TRANSMISSION SYSTEMS; SOFTWARE PACKAGE SPICE;

LOGIC CIRCUITS;

EID: 0032047910     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980188     Document Type: Article

References (5)

1. WANG, Z.-G., BERROTH, M., THIEDE, A., RIEGER-MOTZER, M., HOFMANN, P., HÜLSMANN, A., KÖHLER, K., RAYNOR, B., and SCHNEIDER, J.: '40 and 20Gbit/s monolithic integrated clock recovery using a fully-balanced narrowband regenerative frequency divider with 0.2μm AlGaAs/GaAs HEMTs', Electron. Lett., 1996, 32, (22), pp. 2081-2082
2. SCHMIDT, L., and REIN, H.-M.: 'New high-speed bipolar XOR gate with absolutely symmetrical circuit configuration', Electron. Lett., 1990, 26, (7), pp. 430-431
3. YONEYAMA, M., SANO, A., HAGIMOTO, K., OTSUJI, T., MURATA, K., IMAI, Y., YAMAGUCHI, S., ENOKI, T., and SANO, E.: 'Optical repeater circuits using 40-Gbit/s InAlAs/InGaAs HEMT digital IC chip set'. MTT-s, WE1D-2, 1997
4. ENOKI, T., UMEDA, Y., OSAFUNE, K., ITO, H., and ISHII, Y.: 'Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes'. Tech. Dig. Int. Electron. Device Meet., 1995, pp. 193-196
5. ENOKI, T., ITO, H., IKUTA, K., and ISHII, Y.: '0.1μm InAlAs/InGaAs HEMT with an InP-Recess-Etch stopper grown by MOCVD'. Proc. Int. Conf. Indium Phosphide and related Materials, 1995, Hokkaido, Japan, pp. 81-88