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Volumn 34, Issue 9, 1998, Pages 908-910

1Tbit/s demultiplexing using low temperature grown InGaAs/InAlAs multiple quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

FIBER OPTICS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; ULTRAFAST PHENOMENA;

EID: 0032047837     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980584     Document Type: Article
Times cited : (24)

References (4)
  • 1
    • 0028763279 scopus 로고
    • Ultrafast 1.55μm photoresponses in low-temperature-grown InGaAs/InAlAs quantum wells
    • TAKAHASHI, R., KAWAMURA, Y., KAGAWA, T., and IWAMURA, H.: 'Ultrafast 1.55μm photoresponses in low-temperature-grown InGaAs/InAlAs quantum wells', Appl. Phys. Lett., 1994, 65, pp. 1790-1792
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 1790-1792
    • Takahashi, R.1    Kawamura, Y.2    Kagawa, T.3    Iwamura, H.4
  • 2
    • 0030574516 scopus 로고    scopus 로고
    • Ultrafast 1.55μm all-optical switching using low-temperature-grown multiple quantum wells
    • TAKAHASHI, R., KAWAMURA, Y., and IWAMURA, H.: 'Ultrafast 1.55μm all-optical switching using low-temperature-grown multiple quantum wells', Appl. Phys. Lett., 1996, 68, pp. 153-155
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 153-155
    • Takahashi, R.1    Kawamura, Y.2    Iwamura, H.3
  • 3
    • 0030313696 scopus 로고    scopus 로고
    • Ultrahigh-speed all-optical demultiplexing based on low-temperature-grown MQWs
    • TAKAHASHI, R., MATSUOKA, Y., and IWAMURA, H.: 'Ultrahigh-speed all-optical demultiplexing based on low-temperature-grown MQWs'. Proc. 22nd Eur. Conf. on Opt. Comm., 1996, Vol. 4, pp. 11-14
    • (1996) Proc. 22nd Eur. Conf. on Opt. Comm. , vol.4 , pp. 11-14
    • Takahashi, R.1    Matsuoka, Y.2    Iwamura, H.3
  • 4
    • 0029536321 scopus 로고
    • Femtosecond all-optical and gates based on low-temperature grown Be-doped strained InGaAs/InAlAs multiple quantum well
    • TAKAHASHI, R., CHOI, W.Y., KAWAMURA, Y., and IWAMURA, H.: 'Femtosecond all-optical AND gates based on low-temperature grown Be-doped strained InGaAs/InAlAs multiple quantum well'. Proc. 8th annual meeting of Lasers and Electro-Optics Society, 1995, Vol. 1, pp. 343-344
    • (1995) Proc. 8th Annual Meeting of Lasers and Electro-Optics Society , vol.1 , pp. 343-344
    • Takahashi, R.1    Choi, W.Y.2    Kawamura, Y.3    Iwamura, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.