Positron lifetime study of vacancy-type defects in amorphous and polycrystalline nanometer-sized alumina

Applied Physics A: Materials Science and Processing

Volumn 66, Issue 4, 1998, Pages 413-418

  Shek, C H ^a   Gu, T S ^b   Lin, G M ^b   Lai, J K L ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CRYSTAL DEFECTS; GRAIN GROWTH; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; HYDROLYSIS; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; OXIDATION; POLYCRYSTALLINE MATERIALS;

POSITRON LIFETIME SPECTROSCOPY; POSITRONIUM;

ALUMINA;

EID: 0032047603     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050687     Document Type: Article

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