Effect of reactive ion etching and post-etching annealing on the electrical characteristics of indium-tin oxide/silicon junctions

Journal of Materials Science: Materials in Electronics

Volumn 9, Issue 2, 1998, Pages 151-157

  Chiou, Bi Shiou ^a   Wu, King Long ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; MAGNETRON SPUTTERING; OHMIC CONTACTS; REACTIVE ION ETCHING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SURFACE TREATMENT; CAPACITANCE; CHARGE TRANSFER; COMPOSITION EFFECTS; DEPOSITION; SEMICONDUCTING FILMS; SILICON WAFERS;

CAPACITANCE VOLTAGE CHARACTERISTICS; IMPURITY DEFECTS; INDIUM TIN OXIDE; NET POSITIVE ION CHARGE; POST ETCHING ANNEALING; SERIES RESISTANCE; BARRIER HEIGHT; ELECTRIC CHARACTERISTICS; JUNCTION TRANSFER; POSITIVE ION CHARGE;

HETEROJUNCTIONS; SEMICONDUCTOR JUNCTIONS;

EID: 0032047526     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008869724623     Document Type: Article

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