The influence of gas-surface interaction on gas-film damping in a silicon accelerometer

Sensors and Actuators, A: Physical

Volumn 66, Issue 1-3, 1998, Pages 83-92

  Veijola, Timo ^a   Kuisma, Heikki ^b   Lahdenperä, Juha ^b  

^a AALTO UNIVERSITY   (Finland)

^b VTI Hamlin OY   (Finland)

Author keywords

Accelerometer model; Accommodation coefficient; Boltzmann equation; Effective viscosity; Gas film damping; Rarefied gas flow

Indexed keywords

DAMPING; FREQUENCY RESPONSE; LINEARIZATION; MATHEMATICAL MODELS; PHASE INTERFACES; REYNOLDS NUMBER; SEMICONDUCTING SILICON; SINGLE CRYSTALS; VARIATIONAL TECHNIQUES; VISCOSITY;

ACCOMMODATION COEFFICIENT; BOLTZMANN EQUATION; GAS FILM DAMPING; RAREFIED GAS FLOW; SILICON ACCELEROMETERS;

ACCELEROMETERS;

EID: 0032047244     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)01732-9     Document Type: Article

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