Influence of O2 and H2O2 on the metallic contamination process of silicon wafers in dilute HF solutions

Semiconductor Science and Technology

Volumn 13, Issue 4, 1998, Pages 444-452

  Bertagna, Valérie ^a   Rouelle, François ^b   Chemla, Marius ^b  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b SORBONNE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CARRIER CONCENTRATION; CATALYSIS; CONTAMINATION; COPPER; ELECTROCHEMISTRY; HYDROFLUORIC ACID; HYDROGEN PEROXIDE; IONS; OXYGEN; SURFACE CLEANING; ULSI CIRCUITS;

COPPER IONS; DILUTE HYDROFLUORIC ACID SOLUTIONS; METALLIC CONTAMINATION PROCESS;

SILICON WAFERS;

EID: 0032046743     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/4/016     Document Type: Article

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