Growth and characterization of pure and Er-doped CsLiB6O10 single crystals

Journal of Crystal Growth

Volumn 186, Issue 4, 1998, Pages 612-615

  Bai, K ^a   Jung, S T ^b  

^a Korea Institute of Energy Research (KIER)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

CLBO; Dielectric properties; Er dopant effects; Micro crack; Micro inclusion; XRD pattern

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL GROWTH; DIELECTRIC PROPERTIES OF SOLIDS; DOPING (ADDITIVES); ERBIUM COMPOUNDS; INCLUSIONS; SINGLE CRYSTALS; X RAY CRYSTALLOGRAPHY;

CESIUM LITHIUM BORATE; ERBIUM OXIDE; TOP SEEDED SOLUTION GROWTH;

CESIUM COMPOUNDS;

EID: 0032046453     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00832-4     Document Type: Article

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