SCOPUS 정보 검색 플랫폼

Volumn 145, Issue 4, 1998, Pages 1351-1355

Impact of floating gate dopant concentration and interpoly dielectric processing on tunnel dielectric reliability

(6) Heinisch, Holger H a,b Hornung, Brian E a Linkous, Ralph B a Craig, Steven A a Mirabedini, Mohammad R a,b Wortman, J J a

a North Carolina State University (United States)

b ELECTROCHEMICAL SOCIETY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; FILM GROWTH; ION IMPLANTATION; MOS DEVICES; OXIDATION; SEMICONDUCTOR DOPING;

FLOATING GATE DEVICES; RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD); THERMAL BUDGET;

DIELECTRIC FILMS;

EID: 0032046341 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1838464 Document Type: Article

Times cited : (2)

References (15)

1
- 0026856305
- G. Crisenza, C. Clementi, G. Ghidini, and M. Tosi, Qual. Rel. Eng. Int., 8, 177 (1992).;
- (1992) Qual. Rel. Eng. Int. , vol.8 , pp. 177
- Crisenza, G.¹ Clementi, C.² Ghidini, G.³ Tosi, M.⁴

2
- 85056969203
- R. Moazzami and C. Hu, Tech. Dig. Int. Electron Devices Meet., p 139 (1992).
- (1992) Tech. Dig. Int. Electron Devices Meet. , pp. 139
- Moazzami, R.¹ Hu, C.²

3
- 11544292454
- E. F Runnion, S. M. Gladstone, R. S. Scott, and D. J. Dumin, IEEE IRPS, p 93 (1996).
- (1996) IEEE IRPS , pp. 93
- Runnion, E.F.¹ Gladstone, S.M.² Scott, R.S.³ Dumin, D.J.⁴

4
- 0026186067
- K. Yoneda, Y. Fukuzaki, K. Satoh, Y. Hata, Y. Todokoro, and M. Inoue, J. Electrochem. Soc., 138, 2090 (1991).
- (1991) J. Electrochem. Soc. , vol.138 , pp. 2090
- Yoneda, K.¹ Fukuzaki, Y.² Satoh, K.³ Hata, Y.⁴ Todokoro, Y.⁵ Inoue, M.⁶

5
- 3342949514
- T. Kubota, K. Ando, and S. Muramatsu, IEEE IRPS, p 12 (1996).
- (1996) IEEE IRPS , pp. 12
- Kubota, T.¹ Ando, K.² Muramatsu, S.³

6
- 0028590423
- H. Watanabe, S. Aritome, G. J. Hemink, and R. Shirota, in Symposium on VLSI Technology, p 47 (1994).
- (1994) Symposium on VLSI Technology , pp. 47
- Watanabe, H.¹ Aritome, S.² Hemink, G.J.³ Shirota, R.⁴

7
- 11744387969
- D. Wristers, H. H. Wang, L. K. Han, D. L. Kwong, and J. Fulford, IEEE IRPS, p 77 (1996).
- (1996) IEEE IRPS , pp. 77
- Wristers, D.¹ Wang, H.H.² Han, L.K.³ Kwong, D.L.⁴ Fulford, J.⁵

8
- 0026955196
- M. Wong, D. K.-Y. Liu, and S. S.-W. Huang, IEEE Electron Device Lett., EDL-13, 566 (1992).
- (1992) IEEE Electron Device Lett. , vol.EDL-13 , pp. 566
- Wong, M.¹ Liu, D.K.-Y.² Huang, S.S.-W.³

9
- 85045721574
- H. Z. Massoud, E. H. Pointdexter, and C. R. Helms, Editors, PV 96-1, The Electrochemical Society Proceedings Series, Pennington, NJ
- 2 Interface-3, H. Z. Massoud, E. H. Pointdexter, and C. R. Helms, Editors, PV 96-1, p 282, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
- (1996) 2 Interface-3 , pp. 282
- Misra, V.¹ Heinisch, H.H.² Henson, W.K.³ Hornung, B.E.⁴ Wortman, J.J.⁵

10
- 21544467967
- D. J. DiMaria and J. W. Stasiak, J. Appl. Phys., 65, 2342 (1989).
- (1989) J. Appl. Phys. , vol.65 , pp. 2342
- Dimaria, D.J.¹ Stasiak, J.W.²

11
- 0000143442
- D. J. DiMaria, D. Arnold, and E. Cartier, Appl. Phys. Lett., 61, 2329 (1992).
- (1992) Appl. Phys. Lett. , vol.61 , pp. 2329
- DiMaria, D.J.¹ Arnold, D.² Cartier, E.³

12
- 0028430427
- K. F. Schuegraf and C. Hu, IEEE Trans. Electron Devices, ED-41, 761 (1994).
- (1994) IEEE Trans. Electron Devices , vol.ED-41 , pp. 761
- Schuegraf, K.F.¹ Hu, C.²

13
- 11744255522
- D. J. Dumin, R. S. Scott, and R. Subramoniam, IEEE IRPS, p 285 (1993).
- (1993) IEEE IRPS , pp. 285
- Dumin, D.J.¹ Scott, R.S.² Subramoniam, R.³

14
- 0017532558
- P. Solomon, J. Appl. Phys., 48, 3843 (1977).
- (1977) J. Appl. Phys. , vol.48 , pp. 3843
- Solomon, P.¹

15
- 0346931213
- B. Euzet, N. Boruta, J. Lee, and C. Jenq, IEEE IRPS, p 11 (1981).
- (1981) IEEE IRPS , pp. 11
- Euzet, B.¹ Boruta, N.² Lee, J.³ Jenq, C.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.