Thermal processing's tool of choice: Single-wafer RTP or fast ramp batch?

Semiconductor International

Volumn 21, Issue 4, 1998, Pages 83-90

  Peters, Laura ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

INDUSTRIAL FURNACES; ION IMPLANTATION; PROCESS CONTROL; SEMICONDUCTOR JUNCTIONS; TEMPERATURE CONTROL;

FAST RAMP BATCH FURNACES; RAPID THERMAL PROCESSORS (RTP);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032046215     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. L. Peters, "Speeding the Transition to 0.18 μm," Semiconductor International, Jan. 1998, p. 61.
2. K. Okumura, "Fast Thermal Processing System (FTPS) Allows Consecutive Processing of Advanced Film Stacks While Reducing Process Development Cycle Time," Nikkei Microdevices, Aug. 1997, p. 195.
3. P. Singer, "Thermal Processing: The RTP Race Heats Up," Semiconductor International, March 1996, p. 64.
4. C.Y. Chang and S.M. Sze, eds., ULSI Technology, McGraw-Hill Book Co., 1996.
5. E.G. Seebauer, R. Ditchfield, "Fixing Hidden Problems with Thermal Budget," Solid State Technology, Oct. 1997, p. 111.