Effect of RCA cleaning on the surface chemistry of glass and polysilicon films as studied by ToF-SIMS and XPS

Surface and Interface Analysis

Volumn 26, Issue 4, 1998, Pages 270-277

  Onyiriuka, E C ^a   Moore, C B ^a   Fehlner, F P ^a   Binkowski, N J ^a   Salamida, D ^b   King, T J ^c   Couillard, J G ^d  

^a SP FR 3 ^*  (United States)

^b XEROX CORPORATION   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Department of Obstetrics Gynecology   (United States)

Author keywords

Glass; Polysilicon; RCA clean; Surface chemistry; Thin film transistor; ToF SIMS; X ray photoelectron spectroscopy; XPS

Indexed keywords

DECONTAMINATION; ETCHING; HYDROFLUORIC ACID; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICA; SURFACE CLEANING; SURFACE PROPERTIES; THIN FILM TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE CHEMISTRY;

GLASS;

EID: 0032046125     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199804)26:4<270::AID-SIA371>3.0.CO;2-H     Document Type: Article

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