Interaction effects at the magnetic-field induced metal-insulator transition in Si/SiGe superlattices

Solid State Communications

Volumn 106, Issue 3, 1998, Pages 157-161

  Brunthaler, G ^a,b   Dietl, T ^a,b   Prinz, A ^a,b   Sawicki, M ^a,b   Jaroszynski J ^b   Glod P ^b   Schaffler F ^a   Bauer, G ^a   Maude, D K ^c   Portal, J C ^c  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b INSTITUTE OF PHYSICS   (Poland)

^c MPI CNRS   (France)

Author keywords

A. disordered systems; A. quantum wells; D. electron electron interaction; D. quantum localisation

Indexed keywords

BAND STRUCTURE; ELECTRIC CONDUCTIVITY; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; PHASE TRANSITIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON-ELECTRON INTERACTION; METAL INSULATOR TRANSITION; QUANTUM LOCALIZATION; SILICON GERMANIDE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032045060     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00013-1     Document Type: Article

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