High temperature thermally stimulated currents analysis of CVD diamond films

Solid-State Electronics

Volumn 42, Issue 4, 1998, Pages 674-676

  Borchi, E ^a   Bruzzi, M ^a   Pirollo, S ^a   Sciortino, S ^a  

^a INFN SEZIONE DI FIRENZE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; INDUCED CURRENTS; RADIATION DETECTORS;

BETA IRRADIATION; ELECTRON CAPTURE CROSS SECTION; THERMALLY STIMULATED CURRENTS; TRAP CONCENTRATION;

DIAMOND FILMS;

EID: 0032044865     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00281-5     Document Type: Article

References (13)