A compact temperature sensor for a 1.0 μm CMOS technology using lateral p-n-p transistors

Microelectronics Journal

Volumn 29, Issue 4-5, 1998, Pages 277-281

  Montané, Enric ^a   Bota, Sebastian A ^a   Samitier, Josep ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; SENSORS; TEMPERATURE MEASUREMENT; TEMPERATURE MEASURING INSTRUMENTS;

TEMPERATURE SENSORS;

MICROELECTRONICS;

EID: 0032043270     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(97)00067-0     Document Type: Article

References (7)

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3. Holmann, W.T. and Connelly, J.A. A compact low noise operational amplifier for a 1.2 μm digital CMOS technology, IEEE J. Solid-State Circuits, SC-30 (1995) 710-714.
4. Vittoz, E.A. MOS transistors operated in the lateral bipolar mode and their application in CMOS technology, IEEE J. Solid-State Circuits, SC-18 (1983) 263-279.
5. Pan, T.W. and Abidi, A.A. A 50-db variable gain amplifier using parasitic bipolar transistors in CMOS, IEEE J. Solid-State Circuits, SC-24 (1989) 951-961.
6. Ristic, L. (ed.), Sensor Technology and Devices, Artech House, Boston, 1994, pp. 287-315.
7. BE characteristics with application to bandgap reference sources, IEEE J. Solid-State Circuits, SC-15 (1980) 1076-1084.