Metal/n-CdTe interfaces: A study of electrical contacts by deep level transient spectroscopy and ballistic electron emission microscopy

Solid-State Electronics

Volumn 42, Issue 4, 1998, Pages 595-604

  Dharmadasa, I M ^a   Blomfield, C J ^a   Scott, C G ^b   Coratger, R ^c   Ajustron, F ^c   Beauvillain, J ^c  

^a SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF HULL   (United Kingdom)

^c CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONTACTS; ELECTRON MICROSCOPY; ELECTRON TRAPS; ENERGY GAP; ETCHING; FERMI LEVEL; INTERFACES (MATERIALS); SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM); CADMIUM TELLURIDE; FERMI LEVEL PINNING;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0032043035     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00296-7     Document Type: Article

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