A study of semiconductor surfaces and devices by coupled IR photon tunneling and atomic-force microscopy

Ultramicroscopy

Volumn 71, Issue 1-4, 1998, Pages 231-234

  Gall Borrut, P ^a   Castagne, M ^a   Weyher, J L ^a   Fillard, J P ^a   Bonnafe, J ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICES; SURFACES;

OPTICAL BEAM INJECTION SYSTEM; PHOTON SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR SURFACES; SYNCHRONOUS ATOMIC FORCE MICROSCOPY;

MICROSCOPIC EXAMINATION;

ARTICLE; ATOMIC FORCE MICROSCOPY; ELECTRON BEAM; INSTRUMENTATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR;

EID: 0032033270     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(97)00079-X     Document Type: Article

References (6)

1. Fillard J.P. Near Field Optics and Nanoscopy. 1996;World Scientific, Singapore.
2. van Hulst N.F., Moers M.H.P., Noordman O.F.J., Tack R.G., Segerink F.B., Bölger B. Appl. Phys. Lett. 62(5):1993;461.
3. Weyher J.L., van de Ven J. J. Crystal Growth. 63:1983;285.
4. van de Ven J., Weyher J.L., van den Meerakker J.E.A.M., Kelly J.J. J. Electrochem. Soc. 133:1986;799.
5. Ximen H., Russel P.E. Ultramicroscopy. 42:1992;1526.
6. Fillard J.P., Castagne M., Prioleau C., Benfedda M., Bonnafe J. Ultramicroscopy. 61:1995;85.