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Volumn 400, Issue 1-3, 1998, Pages 356-366

Dissociative adsorption and site specificity in the initial stages of tetraethoxysilane (TEOS) interaction with Si(111)-(7 × 7)

(4) Spitzmuller J a Braun, J a Rauscher, H a Behm, R J a

a UNIVERSITY OF ULM (Germany)

Author keywords

Chemical vapor deposition; Chemisorption; Scanning tunneling microscopy; Silicon; Surface reactions

Indexed keywords

ADSORPTION; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; CRYSTAL ORIENTATION; DISSOCIATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ADATOMS; SITE SPECIFICITY; TETRAETHOXYSILANE;

SILANES;

EID: 0032028517 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00892-3 Document Type: Article

Times cited : (8)

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