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Journal of Materials Research

Volumn 13, Issue 3, 1998, Pages 726-730

TiN prepared by plasma source ion implantation of nitrogen into Ti as a diffusion barrier for Si/Cu metallization

(7) Wang, W a Booske, J H a Liu, H L a Gearhart, S S a Shohet, J L a Bedell, S b Lanford, W b

a UNIVERSITY OF WISCONSIN MADISON (United States)

b STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DIFFUSION; ELECTRIC RESISTANCE MEASUREMENT; FILMS; ION IMPLANTATION; METALLIZING; NITROGEN; PHYSICAL PROPERTIES; PLASMA APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TITANIUM;

DIFFUSION BARRIER; FOUR POINT PROBE SHEET RESISTANCE MEASUREMENT; PLASMA SOURCE ION IMPLANTATION; SILICON COPPER METALLIZATION;

TITANIUM NITRIDE;

EID: 0032027005 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.1998.0091 Document Type: Article

Times cited : (5)

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