Deep-level states in MOVPE AlGaAs: The influence of carrier gas

Journal of Crystal Growth

Volumn 186, Issue 1-2, 1998, Pages 13-20

  Darmo, J ^a   Dubecky F ^a   Hardtdegen, H ^b   Hollfelder, M ^b   Schmidt, R ^b  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

(AlGa)As; Deep level state; Deep level transient spectroscopy; Electron trap; Low pressure metalorganic vapour phase epitaxy; Nitrogen carrier gas

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM ARSENIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032026184     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00474-0     Document Type: Article

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