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Volumn 52, Issue 3, 1998, Pages 191-199

FEOL technology trend

Author keywords

Bipolar circuits; Front end of line technology; Semiconductors

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; ENERGY GAP; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032026170     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(97)02029-4     Document Type: Review
Times cited : (1)

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    • Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.