-
1
-
-
85033901632
-
-
note
-
The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 4300 Steven Creek Boulevard, Suite 271, San Jose, CA 95129, USA, 1994.
-
-
-
-
2
-
-
0029207481
-
Performance trends in high-end processors
-
G.A. Sai-Halasz, Performance trends in high-end processors, Proc. IEEE 83 (1994) 20-36.
-
(1994)
Proc. IEEE
, vol.83
, pp. 20-36
-
-
Sai-Halasz, G.A.1
-
3
-
-
0016116644
-
Design of ion-implanted MOSFETs with very small physical dimensions
-
R.H. Dennard, F.H. Gaensslen, H.N. Yu, V.L. Rideout, E. Bassous, A.R. LeBlanc, Design of ion-implanted MOSFETs with very small physical dimensions, IEEE J. Solid-State Circuits SC-9 (1974) 256.
-
(1974)
IEEE J. Solid-state Circuits
, vol.SC-9
, pp. 256
-
-
Dennard, R.H.1
Gaensslen, F.H.2
Yu, H.N.3
Rideout, V.L.4
Bassous, E.5
LeBlanc, A.R.6
-
4
-
-
0027879328
-
High performance 0.1-μm CMOS devices with 1.5-V power supply
-
Y. Taur, S. Wind, Y. Mii, Y. Lii, D. Moy, K. Jenkins, C.L. Chen, P.J. Coane, D. Klaus, J. Bucchignano, M. Rosenfield, M. Thomson, M. Polcari, High performance 0.1-μm CMOS devices with 1.5-V power supply, 1993 IEDM Technical Digest, 1993, pp. 127-130.
-
(1993)
1993 IEDM Technical Digest
, pp. 127-130
-
-
Taur, Y.1
Wind, S.2
Mii, Y.3
Lii, Y.4
Moy, D.5
Jenkins, K.6
Chen, C.L.7
Coane, P.J.8
Klaus, D.9
Bucchignano, J.10
Rosenfield, M.11
Thomson, M.12
Polcari, M.13
-
6
-
-
0021406605
-
Generalized scaling theory and its application to a 1/4-micrometer MOSFET design
-
G. Baccarani, M.R. Wordeman, R.H. Dennard, Generalized scaling theory and its application to a 1/4-micrometer MOSFET design, IEEE Trans. Electron Devices ED-31 (1984) 452.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 452
-
-
Baccarani, G.1
Wordeman, M.R.2
Dennard, R.H.3
-
7
-
-
0028578426
-
An ultralow power 0.1-μm CMOS
-
Y. Mii, S. Wind, Y. Taur, Y. Lii, D. Klaus, J. Bucchignano, An ultralow power 0.1-μm CMOS, VLSI Technology Symposium Technical Digest, 1994, pp. 9-10.
-
(1994)
VLSI Technology Symposium Technical Digest
, pp. 9-10
-
-
Mii, Y.1
Wind, S.2
Taur, Y.3
Lii, Y.4
Klaus, D.5
Bucchignano, J.6
-
8
-
-
0029219539
-
CMOS scaling into the 21st century: 0.1 μm and beyond
-
Y. Taur, Y. Mii, D. Frank, H-S. Wong, D. Buchanan, S. Wind, S. Rishton, G. Sai-Halasz, E. Nowak, CMOS scaling into the 21st century: 0.1 μm and beyond, IBM J. Res. Develop. 39 (1995) 245.
-
(1995)
IBM J. Res. Develop.
, vol.39
, pp. 245
-
-
Taur, Y.1
Mii, Y.2
Frank, D.3
Wong, H.-S.4
Buchanan, D.5
Wind, S.6
Rishton, S.7
Sai-Halasz, G.8
Nowak, E.9
-
9
-
-
0018505201
-
Bipolar transistor design for optimized power-delay logic circuits
-
D.D. Tang, P.M. Solomon, Bipolar transistor design for optimized power-delay logic circuits, IEEE J. Solid-State Circuits SC-14 (1979) 679-684.
-
(1979)
IEEE J. Solid-state Circuits
, vol.SC-14
, pp. 679-684
-
-
Tang, D.D.1
Solomon, P.M.2
-
10
-
-
0022919395
-
Bipolar trends
-
T.H. Ning, D.D. Tang, Bipolar trends, Proc. IEEE 74 (1986) 1669-1677.
-
(1986)
Proc. IEEE
, vol.74
, pp. 1669-1677
-
-
Ning, T.H.1
Tang, D.D.2
-
11
-
-
0029276716
-
Silicon bipolar device structures for digital applications: Technology trends and future directions
-
J.D. Warnock, Silicon bipolar device structures for digital applications: technology trends and future directions, IEEE Trans. Electron Devices 42 (1995) 377-389.
-
(1995)
IEEE Trans. Electron Devices
, vol.42
, pp. 377-389
-
-
Warnock, J.D.1
-
12
-
-
0019080362
-
Effect of emitter contact on current gain of silicon bipolar devices
-
T.H. Ning, R.D. Isaac, Effect of emitter contact on current gain of silicon bipolar devices, IEEE Trans. Electron Devices ED-27 (1980) 2051-2055.
-
(1980)
IEEE Trans. Electron Devices
, vol.ED-27
, pp. 2051-2055
-
-
Ning, T.H.1
Isaac, R.D.2
-
13
-
-
0040932864
-
ES/9000 semiconductor and packaging technologies
-
ES/9000 semiconductor and packaging technologies, IBM J. Res. Develop. 36 (1992).
-
(1992)
IBM J. Res. Develop.
, vol.36
-
-
-
14
-
-
0025419030
-
T SiGe-base heterojunction bipolar transistors
-
T SiGe-base heterojunction bipolar transistors, IEEE Electron Devices Lett. 11 (1990) 171-173.
-
(1990)
IEEE Electron Devices Lett.
, vol.11
, pp. 171-173
-
-
Patton, G.L.1
Comfort, J.H.2
Meyerson, B.S.3
Crabbé, E.F.4
Scilla, G.J.5
De Frésart, E.6
Stork, J.M.C.7
Sun, J.Y.-C.8
Harame, D.L.9
Burghartz, J.N.10
-
15
-
-
0022162070
-
Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region
-
H. Kroëmer, Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region, Solid-State Electron. 28 (1985) 1101-1103.
-
(1985)
Solid-state Electron.
, vol.28
, pp. 1101-1103
-
-
Kroëmer, H.1
-
16
-
-
0022751618
-
Analysis of the gate-voltage dependent series resistance of MOSFETs
-
K.K. Ng, W.T. Lynch, Analysis of the gate-voltage dependent series resistance of MOSFETs, IEEE Trans. Electron Devices ED-33 (1986) 965.
-
(1986)
IEEE Trans. Electron Devices
, vol.ED-33
, pp. 965
-
-
Ng, K.K.1
Lynch, W.T.2
-
17
-
-
0001672081
-
Models for contacts to planar devices
-
H.H. Berger, Models for contacts to planar devices, Solid-State Electron. 15 (1972) 145.
-
(1972)
Solid-state Electron.
, vol.15
, pp. 145
-
-
Berger, H.H.1
-
18
-
-
0014735482
-
Electron tunneling and contact resistance of metal-silicon contact barriers
-
A.Y.C. Yu, Electron tunneling and contact resistance of metal-silicon contact barriers, Solid-State Electron. 13 (1970) 239.
-
(1970)
Solid-state Electron.
, vol.13
, pp. 239
-
-
Yu, A.Y.C.1
-
20
-
-
0023313303
-
2
-
2, IEEE Trans. Electron Devices ED-34 (1987) 575.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, pp. 575
-
-
Taur, Y.1
Sun, Y.C.2
Moy, D.3
Wang, L.K.4
Davari, B.5
Klepner, S.P.6
Ting, C.Y.7
-
22
-
-
0040338871
-
Many advanced bipolar processes are reported in special issue on Bipolar BiCMOS/CMOS devices and technologies
-
Many advanced bipolar processes are reported in Special Issue on Bipolar BiCMOS/CMOS Devices and Technologies, IEEE Trans. Electron Devices 42 (1995).
-
(1995)
IEEE Trans. Electron Devices
, vol.42
-
-
|