High-quality conductive In2O3〈Sn〉 and RuO2 layers grown by magnetron sputtering

Surface and Coatings Technology

Volumn 100-101, Issue 1-3, 1998, Pages 305-308

  Butkute, R ^a   Lisauskas, V ^a   Vengalis, B ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

Epitaxial films; Indium tin oxide; Magnetron sputtering; Ruthenium oxide

Indexed keywords

ALUMINA; ANNEALING; CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; FILM PREPARATION; MAGNETRON SPUTTERING; REFLECTOMETERS; RUTHENIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STOICHIOMETRY;

INDIUM TIN OXIDE; RUTHENIUM OXIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032025122     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(97)00638-5     Document Type: Article

References (6)

1. I. Hamberg, C.G. Granqvist, J. Appl. Phys. 60 (1986) 123.
2. L. Krusin-Elbaum, M. Wittmer, D.S. Yee, Appl. Phys. Lett. 50 (1987) 1879.
3. M. Kamei, T. Yagami, S. Takaki, Y. Shigesato, Appl. Phys. Lett. 64 (1990) 1542.
4. R. Butkute, V. Lisauskas, L. Dapkus, V. Jasutis, A. Jukna, B. Vengalis, Lithuanian J. Phys. 36 (1996) 230.
5. Q.X. Jia, X.D. Wu, R.S. Foltyn, A.T. Findikoglu, P. Tiwari, Appl. Phys. Lett. 64 (1994) 2712.
6. Q.X. Jia, S.G. Song, S.R. Foltyn, X.D. Wu, J. Mater. Res. 10 (1995) 2401.