Quantization of the hall conductance in a three-dimensional layer

Physical Review Letters

Volumn 80, Issue 12, 1998, Pages 2681-2684

  Murzin, S S ^a,b,c   Jansen, A G M ^a,b   Linden, P V D ^a,b  

^a GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^b CNRS   (France)

^c INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; EPITAXIAL GROWTH; FERMI LEVEL; MAGNETIC FIELD EFFECTS; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THREE DIMENSIONAL;

HALL CONDUCTANCE; HALL RESISTANCE; QUANTUM HALL EFFECT;

HALL EFFECT;

EID: 0032023736     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.80.2681     Document Type: Article

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