High efficiency 0.5W/A at 85°C strained multiquantum well lasers entirely grown by MOVPE on p-InP substrate

Electronics Letters

Volumn 34, Issue 6, 1998, Pages 556-558

  Nakamura, T ^a   Tsuruoka, K ^a   Uda, A ^a   Fukushima, K ^a   Torikai, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIBER OPTIC NETWORKS; METALLORGANIC VAPOR PHASE EPITAXY; PASSIVE NETWORKS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

PASSIVE OPTICAL NETWORKS (PON);

QUANTUM WELL LASERS;

EID: 0032023550     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980440     Document Type: Article

References (5)

1. NAMEGAYA, T., KASUKAWA, A., IWAI, N., and KIKUTA, T.: 'High temperature operation of 1.3μm GaInAsP/InP GRINSCH strained-layer quantum well lasers', Electron. Lett., 1993, 29, pp. 392-393
2. YAMADA, H., SENGA, K., SASAKI, Y., TORIKAI, T., and UJI, T.: '-40°C ∼ +85°C bias-free λ = 1.3μm strained MQW-LDs for Gb/s transmission modules without temperature control'. Tech. Dig. ECOC'94, 1994, Paper 719, pp. 719-722
3. TERAKADO, T., TSURUOKA, K., ISHIDA, T., NAKAMURA, T., FULUSHIMA, K., AE, S., UDA, A., TORI, T., and UJI, T.: 'Submilliamp threshold 1.3 μm strained MQW lasers with novel p-substrate buried-heterostructure grown by MOVPE using TBA and TBP', Electron. Lett., 1995, 31, pp. 2182-2184
4. ASADA, M., KAMEYAMA, A., and SUEMATSU, Y.: 'Gain and intervalence band absorption in quantum-well lasers', IEEE J. Quantum Electron., 1984, QE-20, pp. 745-752
5. SATO, K., YAMADA, H., NAKAMURA, T., and TORIKAI, T.: 'Separate confinement heterostructure dependence of dynamic characteristics in 1.3μm quantum-well laser diodes'. Tech. Dig. OECC'97, 1997, Paper 9C2-3, pp. 172-173