Tritiated amorphous silicon films and devices

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 2, 1998, Pages 893-896

  Kosteski, T ^a   Kherani, N P ^b   Gaspari, F ^a   Zukotynski, S ^a   Shmayda, W T ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b ONTARIO HYDRO TECHNOLOGIES   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRIC CONDUCTIVITY; ELECTRONIC DENSITY OF STATES; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GLOW DISCHARGES; NUCLEAR BATTERIES; PHOTONS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; THIN FILMS; TRITIUM;

BETACONDUCTIVITY; BETAVOLTAIC BATTERY; HYDROGENATED AMORPHOUS SILICON;

AMORPHOUS SILICON;

EID: 0032023506     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581031     Document Type: Article

References (8)

1. L. C. Olsen, NASA Conference Publication No. 3210, 1993, p. 256.
2. P. E. Sims, L. C. DiNetta, and A. M. Barnett, NASA Conference Publication No. 3278, 1994, p. 373.
3. W. E. Horne, NASA Conference Publication No. 3107, 1991, p. 474.
4. N. P. Kherani, T. Kosteski, S. Zukotynski, and W. T. Shmayda, Fusion Technol. 28, 1609 (1995).
5. L. A. Hamel, J. Dubeau, T. Pochet, and B. Equer, IEEE Trans. Nucl. Sci. 38, 251 (1991).
6. M. Harry and S. Zukotynski, J. Vac. Sci. Technol. A 9, 496 (1991).
7. L. S. Sidhu, T. Kosteski, S. K. O'Leary, F. Gaspari, S. Zukotynski, N. P. Kherani, and W. T. Shmayda, Mater. Res. Soc. Symp. Proc. 420, 509 (1996).
8. H. Paes, C. Achete, and W. Losch, Mater. Res. Soc. Symp. Proc. 297, 595 (1993).