Modeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixing

IEEE Journal of Quantum Electronics

Volumn 34, Issue 3, 1998, Pages 519-525

  Chan, Michael C Y ^a   Chan, Y ^a   Li, E Herbert ^a,b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b IEEE

Author keywords

Diffusion process; InAlGaAs; Optical gain; Quantum well interdiffusion; Quantum well intermixing; Quantum well lasers; Tunable devices

Indexed keywords

ANNEALING; BAND STRUCTURE; CARRIER CONCENTRATION; DIFFUSION; ELECTRONIC DENSITY OF STATES; LASER TUNING; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

LASING WAVELENGTH; MULTIPLE CATIONS INTERMIXING; OPTICAL GAIN;

QUANTUM WELL LASERS;

EID: 0032023435     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.661461     Document Type: Article

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