High-power mode-locked external cavity semiconductor laser using inverse bow-tie semiconductor optical amplifiers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 2, 1998, Pages 209-215

  Gee, S ^b   Alphonse, G ^c   Connolly, J ^c   Delfyett, Peter J ^{a,b,d,e,f,g,h,i}  

^a IEEE   (United States)

^b University of Central Florida   (United States)

^c SARNOFF CORPORATION   (United States)

^d CITY COLLEGE OF NEW YORK   (United States)

^e UNIVERSITY OF ROCHESTER   (United States)

^f CITY UNIVERSITY OF NEW YORK   (United States)

^g TELCORDIA TECHNOLOGIES   (United States)

^h UNIVERSITY OF CENTRAL FLORIDA   (United States)

ⁱ OPTICAL SOCIETY OF AMERICA   (United States)

Author keywords

High power diode lasers; Mode locked diode lasers; Semiconductor optical amplifiers; Ultrafast pulse generation

Indexed keywords

LASER PULSES; LIGHT; LIGHT AMPLIFIERS; OPTICS;

ULTRAFAST PULSE GENERATION;

SEMICONDUCTOR LASERS;

EID: 0032023273     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.686725     Document Type: Article

References (11)

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