The effect of interfacial state on electrical properties of PZT-electrode system for applying to nonvolatile memory devices

Surface and Coatings Technology

Volumn 100-101, Issue 1-3, 1998, Pages 229-233

  Jin, Il Sup ^a   Park, Hyung Ho ^a   Kim, Tae Song ^b  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Fatigue; Interface; Pt; PZT; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; DECOMPOSITION; ELECTRIC SPACE CHARGE; ELECTRODES; FATIGUE OF MATERIALS; FERROELECTRICITY; INTERFACES (MATERIALS); LEAD COMPOUNDS; NONVOLATILE STORAGE; PLATINUM; SURFACE STRUCTURE; THIN FILMS;

LEAD ZIRCONATE TITANATE;

DIELECTRIC FILMS;

EID: 0032022799     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(97)00619-1     Document Type: Article

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