Positive bias effects on the growth of diamond at pressures below 100 mTorr

Thin Solid Films

Volumn 316, Issue 1-2, 1998, Pages 24-28

  Teii, K ^a   Yoshida, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Inductively coupled plasma; Ion bombardment; Low pressure diamond deposition; Sheath potential

Indexed keywords

CRYSTAL GROWTH; DEPOSITION; FILM GROWTH; ION BOMBARDMENT; PLASMA APPLICATIONS; PRESSURE EFFECTS; SUBSTRATES;

INDUCTIVELY COUPLED PLASMA (ICP);

DIAMOND FILMS;

EID: 0032021526     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00382-4     Document Type: Article

References (10)

1. B.R. Stoner, J.T. Glass, Appl. Phys. Lett. 60 (1992) 698.
2. J.S. Lee, K.S. Liu, I.Nan Lin, Appl. Phys. Lett. 67 (1995) 1555.
3. J. Amorim, H.S. Maciel, J.P. Sudano, J. Vac. Sci. Technol. B9 (1991) 362.
4. H. Sugai, K. Nakamura, K. Suzuki, Jpn. J. Appl. Phys. 33 (1994) 2189.
5. R.F. Kemp, J.M. Sellen, Jr., Rev. Sci. Instrum. 37 (1966) 455.
6. M. Yoshikawa, Y. Mori, H. Obata, M. Maegawa, G. Katagiri, H. Ishida, A. Ishitani, Appl. Phys. Lett. 67 (1995) 694.
7. T.-H. Kim, T. Kobayashi, Jpn. J. Appl. Phys. 33 (1994) L459.
8. G.B. Skinner, R.A. Rueherwein, J. Phys. Chem. 63 (1959) 1736.
9. J. Wei, H. Kawarada, J. Suzuki, A. Hiraki, Jpn. J. Appl. Phys. 29 (1990) L1483.
10. A. Hiraki, H. Kawarada, J. Wei, J. Suzuki, Surf. Coat. Tech. 43/44 (1990) 10.