Comparison of the stress between rapid thermal annealed and excimer laser annealed polycrystalline silicon thin films

Solid State Communications

Volumn 105, Issue 12, 1998, Pages 777-781

  Lee, Chang Woo ^a   Ko, Min Kyung ^a   Woo, Sang Lok ^a   Oh, Hwan Won ^a   Gho, Seok Jung ^a,b   Lee, Jeong Yong ^a,c  

^a Kookmin University   (South Korea)

^b Korea Adv Inst Sci and Technol ^*  (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPRESSIVE STRESS; CRYSTAL GROWTH; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; RESIDUAL STRESSES; VOLUME FRACTION;

EXCIMER LASER ANNEALING; FURNACE ANNEALING; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MULTISTEP RAPID THERMAL ANNEALING; THERMAL RELAXATION;

THIN FILMS;

EID: 0032020233     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)10235-6     Document Type: Article

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