First stages of low temperature and low pressure carbonization of Si (0 0 1) in acetylene

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 301-307

  Stedile, F C ^a   Rochet, F ^b   Poncey, C ^b   Dufour, G ^b   Gunnella, R ^c   De Crescenzi, M ^c   Froment, M ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b SORBONNE UNIVERSITÉ   (France)

^c UNIVERSITY OF CAMERINO   (Italy)

Author keywords

Acetylene; Nuclear reaction; Photodiffraction; Scanning electron microscopy; Silicon carbide; X ray photoelectron spectroscopy

Indexed keywords

ACETYLENE; CARBONIZATION; ELECTRONIC STRUCTURE; FILM GROWTH; LOW TEMPERATURE EFFECTS; MORPHOLOGY; PRESSURE EFFECTS; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SILICON; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

NUCLEAR REACTION ANALYSIS; PHOTODIFFRACTION;

SILICON CARBIDE;

EID: 0032019030     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00699-X     Document Type: Article

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