Silicon Trends and Limits for Advanced Microprocessors

Communications of the ACM

Volumn 41, Issue 3, 1998, Pages 80-87

  Bohr, Mark ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOSENSITIVE FILMS; TITANIUM SILICIDE;

CMOS INTEGRATED CIRCUITS; DIGITAL CIRCUITS; LOGIC GATES; MOSFET DEVICES; OPTICAL INTERCONNECTS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

MICROPROCESSOR CHIPS;

EID: 0032010253     PISSN: 00010782     EISSN: None     Source Type: Journal    
DOI: 10.1145/272287.272327     Document Type: Article

References (7)

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2. Asai, S., and Wada, Y. Technology challenges for integration near and below 0.1μm. Proc. IEEE 85, 4 (April 1997), 505-520.
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6. Dennard, R., Gaensslen, F., Yu, H., Rideout, V., Bassous, E., and LeBlanc, A. Design of ion-implanted MOSFETs with very small physical dimensions. IEEE J. Solid State Circuits SC-9, 5 (Oct. 1974), 256-268.
7. Taur, Y., Buchanan, D., Chen, W., Frank, D., Ismail, K., Lo, S., Sai-Halasz, G., Viswanathan, R., Wann, H., Wind, S., and Wong, H,. CMOS scaling into the nanometer range. Proc. IEEE 85, 4 (April 1997), 486-504.