Potential energy of two structures of Σ = 11〈011〉 tilt grain boundary in silicon and germanium with empirical potentials and tight-binding methods

Computational Materials Science

Volumn 10, Issue 1-4, 1998, Pages 334-338

  Chen, J ^a   Lebouvier, B ^a   Hairie, A ^a   Nouet, G ^a   Paumier, E ^a  

^a LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

Author keywords

Empirical potential; Germanium; Potential energy; Silicon; Tight binding; Tilt grain boundary

Indexed keywords

ELECTRONIC PROPERTIES; GERMANIUM; GRAIN BOUNDARIES;

EMPIRICAL POTENTIAL; POTENTIAL ENERGY; TIGHT-BINDING;

SILICON;

EID: 0032003935     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0927-0256(97)00130-4     Document Type: Article

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