Si and C δ-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices

Materials Science and Engineering B

Volumn 51, Issue 1-3, 1998, Pages 103-105

  Jagadish, C ^a   Li, G ^a   Johnston, M B ^b   Gal, M ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

MOVPE; Nipi doping superlattices; Photoluminescence spectroscopy; Doping

Indexed keywords

CARBON; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

PHOTO EXCITATION INTENSITY;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032003825     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00238-9     Document Type: Article

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