Behaviors of Auger intensities emitted from a Si(111)√3 x √3-Al surface during incident beam rocking of reflection high-energy electron diffraction

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 2 PART A, 1998, Pages

  Horio, Yoshimi ^a  

^a DAIDO UNIVERSITY   (Japan)

Author keywords

AES; RHEED; Si(111) 3 x 3 Al; Surface structure; Wave field

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES; SURFACE STRUCTURE;

AUGER INTENSITY; INCIDENT BEAM ROCKING;

SEMICONDUCTING SILICON;

EID: 0032002256     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l164     Document Type: Article

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