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Volumn 313-314, Issue , 1998, Pages 420-423

Atomic scale characterization of the initial stage of hydrogenated silicon growth

Author keywords

AFM; Atomically flat c Si(111) surface; In situ ellipsometry; Si:H

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DEPOSITION; ELLIPSOMETRY; FILM GROWTH; GLOW DISCHARGES; HYDROGENATION; MORPHOLOGY; SPECTROPHOTOMETRY; STRAIN;

EID: 0032002135     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00857-2     Document Type: Article
Times cited : (1)

References (18)
  • 1
    • 0003277549 scopus 로고
    • H. Fritzsche (Ed.), World Scientific, Singapore
    • R.W. Collins, in: H. Fritzsche (Ed.), Advances in Disordered Semiconductors, vol. 1, World Scientific, Singapore, 1989, p. 1003.
    • (1989) Advances in Disordered Semiconductors , vol.1 , pp. 1003
    • Collins, R.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.