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Volumn 313-314, Issue , 1998, Pages 420-423
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Atomic scale characterization of the initial stage of hydrogenated silicon growth
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Author keywords
AFM; Atomically flat c Si(111) surface; In situ ellipsometry; Si:H
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Indexed keywords
AMORPHOUS SILICON;
ATOMIC FORCE MICROSCOPY;
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL ORIENTATION;
DEPOSITION;
ELLIPSOMETRY;
FILM GROWTH;
GLOW DISCHARGES;
HYDROGENATION;
MORPHOLOGY;
SPECTROPHOTOMETRY;
STRAIN;
SPECTROSCOPIC ELLIPSOMETRY;
AMORPHOUS FILMS;
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EID: 0032002135
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(97)00857-2 Document Type: Article |
Times cited : (1)
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References (18)
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