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Volumn 313-314, Issue , 1998, Pages 259-263

Comparative study of polysilicon-on-oxide using spectroscopic ellipsometry, atomic force microscopy, and transmission electron microscopy

(8) Petrik, P a,b Fried, M a Lohner, T a Berger, R b,c,d Biro L P a Schneider, C c Gyulai, J a,c Ryssel, H b,c

a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

c FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS (Germany)

d SIEMENS AG (Germany)

Author keywords

Atomic force microscopy (AFM); Chemical vapor deposition (CVD); Multilayers; Spectroscopic ellipsometry (SE)

Indexed keywords

ALGORITHMS; APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; POLYCRYSTALLINE MATERIALS; REGRESSION ANALYSIS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

BRUGGEMAN EFFECTIVE MEDIUM APPROXIMATION (BEMA);

SEMICONDUCTING SILICON;

EID: 0032002134 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00829-8 Document Type: Article

Times cited : (41)

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