Resonant cavity enhanced heterojunction phototransistors based on GaInAsSb-AlGaAsSb grown by molecular beam epitaxy

IEEE Photonics Technology Letters

Volumn 10, Issue 2, 1998, Pages 258-260

  Shi, Yan ^a,d   Zhao, Jian H ^a,d   Sarathy, Jiten ^b   Olsen, Gregory H ^b,d   Lee, Hao ^c,d  

^a RUTGERS UNIVERSITY   (United States)

^b GOODRICH CORPORATION   (United States)

^c SARNOFF CORPORATION   (United States)

^d IEEE   (United States)

Author keywords

Bragg reflectors; Heterojunction bipolar transistors; Photodetectors; Phototransistors; Resonant cavity

Indexed keywords

BIPOLAR TRANSISTORS; CRYSTAL LATTICES; HETEROJUNCTIONS; MIRRORS; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

RESONANT CAVITY ENHANCED HETEROJUNCTION PHOTOTRANSISTORS;

PHOTOTRANSISTORS;

EID: 0032001940     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.655377     Document Type: Article

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