Formation of recoil atoms and layer-by-layer sputtering of the single crystal surface under ion bombardment at grazing angles

Applied Surface Science

Volumn 125, Issue 2, 1998, Pages 221-226

  Umarov, F F ^a   Dzhurakhalov, A A ^a   Teshabaeva, N A ^a  

^a Institute for Electronics   (Uzbekistan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COMPUTER SIMULATION; ION BOMBARDMENT; SENSITIVITY ANALYSIS; SINGLE CRYSTALS; SPUTTERING;

RECOIL ATOMS;

SURFACE PHENOMENA;

EID: 0032001190     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00397-8     Document Type: Article

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