Optical characterization of silicon dioxide layers grown on silicon under different growth conditions

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 292-297

  Cho, Yong Jai ^a   Cho, Hyun Mo ^a   Lee, Yun Woo ^a   Lee, Hoi Youn ^a   Lee, In Won ^a   Lee, Sang Kil ^b   Sun, Jung Woo ^b   Moon, Sang Young ^b   Chung, Ho Kyoon ^b   Pang, Hyun Yong ^c   Kim, Sang June ^c   Kim, Sang Youl ^c  

^a Korea Research Institute of Standards and Science   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Ajou University   (South Korea)

Author keywords

Interface layer; Refractive index; S wave anti reflection and p wave anti reflection; Silicon dioxide on crystal silicon; Spectroscopic ellipsometry

Indexed keywords

ELLIPSOMETRY; INTERFACES (MATERIALS); LIGHT REFLECTION; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY (VASE);

SILICA;

EID: 0032001181     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00835-3     Document Type: Article

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