Poly-Si/Poly-SiQc heterojunction thin-film transistors

IEEE Transactions on Electron Devices

Volumn 45, Issue 2, 1998, Pages 401-405

  Choi, Kwangsoo ^a   Matsumura, Masakiyo ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CHARGED PARTICLES; CRYSTALLIZATION; EXCIMER LASERS; HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; POLYCRYSTALS; SEMICONDUCTING SILICON; SILICON CARBIDE;

EXCIMER LASER IRRADIATION;

THIN FILM TRANSISTORS;

EID: 0031999373     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658673     Document Type: Article

References (10)

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