In-situ Kelvin probe and ellipsometry study of the doping of a-Si : H and a-SiC : H layers: Correlation with solar cell parameters

Solar Energy Materials and Solar Cells

Volumn 51, Issue 2, 1998, Pages 145-153

  Hadjadj, A ^a   Favre, M ^a   Equer, B ^a   Roca I Cabarrocas, P ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

a Si : H layers; a SiC : H layers; Ellipsometry study; Kelvin probe

Indexed keywords

AMORPHOUS MATERIALS; BORON; CORRELATION METHODS; DIFFUSION; DOPING (ADDITIVES); ELLIPSOMETRY; INTERFACES (MATERIALS); PHOTOVOLTAIC EFFECTS; PROBES; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON CARBIDE;

DIBORANE; KELVIN PROBE;

SOLAR CELLS;

EID: 0031998729     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00230-4     Document Type: Article

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