Depth profiling of Na in SiOx films by combination of chemical etching and secondary ion mass spectrometry

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 2, 1998, Pages 690-694

  Saito, Reiko ^a,b   Kudo, Masahiro ^b  

^a TOSHIBA CORPORATION   (Japan)

^b SEIKEI UNIVERSITY   (Japan)

Author keywords

Depth profiling; Impurity; Migration; Secondary ion mass spectrometry; Silicon oxide; Sodium in SiOx

Indexed keywords

ETCHING; IMPURITIES; INTERFACES (MATERIALS); SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS; SILVER; SODIUM;

DEPTH PROFILING;

DIELECTRIC FILMS;

EID: 0031998372     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.690     Document Type: Article

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