Improvement of the photoluminescence dead layer model in III-V semiconductors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 2, 1998, Pages 466-470

  Hellouin, Yves ^a   Viktorovitch, Pierre ^a  

^a ECOLE CENTRALE DE LYON   (France)

Author keywords

Dead layer model; III V compound semiconductors; Photoluminescence; Recombination processes; Surface recombination velocity

Indexed keywords

MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SURFACE PHENOMENA;

DEAD LAYER MODEL; SURFACE RECOMBINATION;

SEMICONDUCTOR MATERIALS;

EID: 0031998371     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.466     Document Type: Article

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